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1

High sensitivity hall sensors with low thermal drift using AlGaAs/InGaAs/GaAs heterostructures

V. Mosser, S. Contreras, S. Aboulhouda, Ph. Lorenzini, F. Kobbi, J.L. Robert, K. Zekentes

Journal:

Sensors and Actuators A: Physical

Year:

1994

Language:

english

File:

PDF, 534 KB

english, 1994

2

The effect of banking supervision on central bank preferences: Evidence from panel data

Chortareas, Georgios, Logothetis, Vassileios, Magkonis, Georgios, Zekente, Kalliopi-Maria

Journal:

Economics Letters

Year:

2016

Language:

english

File:

PDF, 825 KB

english, 2016

3

Inflation-output trade-off: Old measures, new determinants?

Magkonis, Georgios, Zekente, Kalliopi-Maria

Journal:

Journal of Macroeconomics

Year:

2020

File:

PDF, 1.26 MB

2020

4

TCAD models of the temperature and doping dependence of the bandgap and low field carrier mobility in 4H-SiC

Stefanakis, Dionysios, Zekentes, Konstantinos

Journal:

Microelectronic Engineering

Year:

2014

Language:

english

File:

PDF, 2.12 MB

english, 2014

5

Compact Modeling of SiC and GaN Junction FETs at High Temperature

Makris, Nikolaos, Zekentes, Konstantinos, Bucher, Matthias

Journal:

Materials Science Forum

Year:

2019

Language:

english

File:

PDF, 1.70 MB

english, 2019

6

Surface roughness studies on 4H-SiC layers grown by liquid phase epitaxy

N. Kuznetsov, K. Tsagaraki, D. Bauman, A. Morozov, I. Nikitina, V. Ivantsov, K. Zekentes

Journal:

Materials Science and Engineering: B

Year:

2001

Language:

english

File:

PDF, 127 KB

english, 2001

7

[IEEE 2006 International Semiconductor Conference - Sinaia, Romania (2006.09.27-2006.09.29)] 2006 International Semiconductor Conference - Termination Optimization for 4H-Sic p-i-n Diodes

Boianceanu, C., Zekentes, K., Camara, N., Kayambaki, M., Rouet, W.

Year:

2006

Language:

english

File:

PDF, 3.87 MB

english, 2006

8

Growth of SiC Microwires through Si Microwires Carburization

Ollivier, Maelig, Mantoux, Arnaud, Bano, Edwige, Rogdakis, Konstantinos, Zekentes, Konstantinos, Baron, Thierry, Latu-Romain, Laurence

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 2.73 MB

english, 2011

9

Study of the reactive ion etching of 6H–SiC and 4H–SiC in SF6/Ar plasmas by optical emission spectroscopy and laser interferometry

N Camara, K Zekentes

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 258 KB

english, 2002

10

[IEEE 23rd International Conference on Microelectronics (MIEL 2002) - Nis, Yugoslavia (12-15 May 2002)] 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) - Thermally stable low resistivity ohmic contacts for high power and high temperature SiC device applications

Kakanakov, R., Kassamakova-Kolaklieva, L., Hristeva, N., Lepoeva, G., Zekentes, K.

Year:

2002

Language:

english

File:

PDF, 215 KB

english, 2002

11

Infra-red characterization of carbonization of Si surfaces by gas source molecular beam epitaxy

el Mekki, M.B., Pascual, J., Androulidaki, M., Zekentes, K., Camassel, J., Stoemenos, J.

Journal:

Diamond and Related Materials

Year:

1997

Language:

english

File:

PDF, 733 KB

english, 1997

12

Electrical transport study of pseudomorphic heterostructures InGaAs-InAlAs on Si and InP substrates

K. Zekentes, A. Georgakilas, M. Lagadas, K. Michelakis, A. Christou, J.M. Mercy, J.L. Robert, L. Konczewicz

Journal:

Sensors and Actuators A: Physical

Year:

1992

Language:

english

File:

PDF, 313 KB

english, 1992

13

High temperature characteristics of Ti/Al and Cr/Al ohmic contacts to n-type GaN

N.A Papanicolaou, K Zekentes

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 469 KB

english, 2002

14

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

Contreras, Sylvie, Konczewicz, Leszek, Kwasnicki, Pawel, Arvinte, Roxana, Peyre, Herve, Chassagne, Thierry, Zielinski, Marcin, Kayambaki, Maria, Juillaguet, Sandrine, Zekentes, Konstantinos

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 961 KB

english, 2016

15

4H-SiC p-Type Doping Determination from Secondary Electrons Imaging

Kayambaki, Maria, Makris, Nikolaos, Tsagaraki, Katerina, Peyré, Hervé, Stavrinidis, Antonis, Konstantinidis, George, Zekentes, Konstantinos

Journal:

Materials Science Forum

Year:

2019

Language:

english

File:

PDF, 276 KB

english, 2019

16

Credit risk and the business cycle: What do we know?

Chortareas, Georgios, Magkonis, Georgios, Zekente, Kalliopi-Maria

Journal:

International Review of Financial Analysis

Year:

2019

Language:

english

File:

PDF, 2.38 MB

english, 2019

17

Topology of twin junctions in epitaxial β-SiC

Papaioannou, V., Komninou, Ph., Dimitrakopulos, G.P., Zekentes, K., Pecz, B., Karakostas, Th., Stoemenos, J.

Journal:

Diamond and Related Materials

Year:

1997

Language:

english

File:

PDF, 751 KB

english, 1997

18

Weak antilocalization and spin precession in quantum wells

Knap, W., Skierbiszewski, C., Zduniak, A., Litwin-Staszewska, E., Bertho, D., Kobbi, F., Robert, J. L., Pikus, G. E., Pikus, F. G., Iordanskii, S. V., Mosser, V., Zekentes, K., Lyanda-Geller, Yu. B.

Journal:

Physical Review B

Year:

1996

Language:

english

File:

PDF, 253 KB

english, 1996

19

Determination of the basic parameters of pseudomorphic GaInAs quantum wells by means of simultaneous transport and optical investigations

E. Litwin-Staszewska, F. Kobbi, M. Kamal-Saadi, D. Dur, C. Skierbiszewski, H. Sibari, K. Zekentes, V. Mosser, A. Raymond, W. Knap, J.L. Robert

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 248 KB

english, 1994

20

Si nanowire p-FET with asymmetric source–drain characteristics

Sang-Kwon Lee, Seung-Yong Lee, Konstantinos Rogdakis, Chan-Oh Jang, Dong-Joo Kim, Edwige Bano, Konstantinos Zekentes

Journal:

Solid State Communications

Year:

2009

Language:

english

File:

PDF, 2.61 MB

english, 2009

21

Electrical characteristics and structural properties of ohmic contacts top-type 4H-SiC epitaxial layers

K. V. Vasilevskii, S. V. Rendakova, I. P. Nikitina, A. I. Babanin, A. N. Andreev, K. Zekentes

Journal:

Year:

1999

Language:

english

File:

PDF, 87 KB

english, 1999

22

Microwave Modulators Based on 4H-SiC p-i-n Diodes

Zekentes, K., Camara, N., Basanets, V.V., Boltovets, M.S., Kryvutsa, V.A., Orechovskij, V.O., Simonchuk, V.I., Zorenko, A.V., Bano, E.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

2008

Language:

english

File:

PDF, 2.72 MB

english, 2008

23

Observation of metastable effects in pseudomorphic heterostructures InCaAs/InAlAs

Konczewicz, L., Mercy, J. M., Baj, M., Robert, J. L., Zekentes, K., Georgakilas, A., Halkias, G., Christou, A.

Journal:

High Pressure Research

Year:

1992

Language:

english

File:

PDF, 224 KB

english, 1992

24

CM-Wave Modulator with High-Voltage 4H SiC pin Diodes

Boltovets, Mykola S., Basanets, Volodymyr V., Zorenko, A.V., Krivutsa, Valentyn A., Camara, Nicolas, Orechovskij, V.O., Simonchuk, V.I., Zekentes, K.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 339 KB

english, 2006

25

Electrochemical C-V Profiling of n-Type 4H-SiC

Zekentes, K., Kayambaki, M., Mousset, S.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 616 KB

english, 2004

26

Isothermal I-V Characteristics of 4 H-SiC p-n Diodes with Low Series Differential Resistivity at Avalanche Breakdown

Vassilevski, Konstantin V., Zekentes, Konstantinos, Zorenko, Alexandr V., Romanov, Leonid P.

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 387 KB

english, 2000

27

Photo-induced current transient spectroscopy of Al0.48In0.52As semi-insulating layers grown on InP by molecular beam epitaxy

A. Kalbousi, G. Marrakchi, A. Tabata, G. Guillot, G. Halkias, K. Zekentes, A. Georgakilas, A. Cristou

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 361 KB

english, 1993

28

Field Effect Transistors Based on Catalyst-Free Grown 3C-SiC Nanowires

Rogdakis, Konstantinos, Bano, Edwige, Montes, Laurent, Bechelany, M., Cornu, David, Zekentes, Konstantinos

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 373 KB

english, 2010

29

SPIE Proceedings [SPIE High-Power Laser Ablation 2006 - Taos, NM (Sunday 7 May 2006)] High-Power Laser Ablation VI - Laser annealing of implanted silicon carbide and Raman characterization

Zergioti, I., Phipps, Claude R., Kontos, A. G., Zekentes, K., Boutopoulos, C., Terzis, P., Raptis, Y. S.

Year:

2006

Language:

english

File:

PDF, 317 KB

english, 2006

30

Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells

Y. Baltagi, S. Monéger, A. Tabata, T. Benyattou, C. Bru, A. Georgakilas, K. Zekentes, G. Halkias

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 253 KB

english, 1993

31

Lateral alignment of SiC dots on Si

V. Cimalla, J. Pezoldt, Th. Stauden, A.A. Schmidt, K. Zekentes, O. Ambacher

Journal:

physica status solidi (c)

Year:

2004

Language:

english

File:

PDF, 139 KB

english, 2004

32

Rectifying Source and Drain Contacts for Effective Carrier Transport Modulation of Extremely Doped SiC Nanowire FETs

Rogdakis, Konstantinos, Bano, Edwige, Montes, Laurent, Bechelany, Mikhael, Cornu, David, Zekentes, Konstantinos

Journal:

IEEE Transactions on Nanotechnology

Year:

2011

Language:

english

File:

PDF, 520 KB

english, 2011

33

Forward-Bias Degradation in 4H-SiC p+nn+ Diodes: Influence of the Mesa Etching

Camara, Nicolas, Thuaire, Aurelie, Bano, Edwige, Zekentes, K.

Journal:

Materials Science Forum

Year:

2005

Language:

english

File:

PDF, 1.02 MB

english, 2005

34

Modelling of 4H-SiC VJFETs with Self-Aligned Contacts

Zekentes, Konstantinos, Vassilevski, Konstantin, Stavrinidis, Antonis, Konstantinidis, George, Kayambaki, Maria, Vamvoukakis, Konstantinos, Vassakis, Emmanouil, Peyre, Herve, Makris, Nikolaos, Bucher,

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 432 KB

english, 2016

35

SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications II - Trieste, France (Sunday 23 May 1993)] Physical Concepts and Materials for Novel Optoelectronic Device Applications II - Characterization of main electron scattering mechanisms in InGaAs/InAlAs single quantum wells by optical modulation spectroscopy

Baltagi, Y., Bru, Catherine, Tabata, A., Benyattou, Taha, Moneger, S., Georgakilas, A., Zekentes, K., Halkias, G., Gendry, Michel, Drouot, V., Hollinger, Guy R., Beltram, Fabio, Gornik, Erich

Year:

1993

Language:

english

File:

PDF, 1001 KB

english, 1993

36

High Power Self-Aligned, Trench-Implanted 4H-SiC JFETs

Vamvoukakis, K., Stavrinidis, A., Stefanakis, D., Konstantinidis, G., Kayambaki, M., Zekentes, K., Fernandez, A.

Journal:

E3S Web of Conferences

Year:

2017

Language:

english

File:

PDF, 4.90 MB

english, 2017

37

Early stages of growth of β-SiC on Si by MBE

K. Zekentes, V. Papaioannou, B. Pecz, J. Stoemenos

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 706 KB

english, 1995

38

Optical properties of InGaAs films embedded in plasma etched InP wells

Georgakilas, A., Christou, A., Lefebvre, P., Allegre, J., Zekentes, K., Halkias, G.

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 680 KB

english, 1992

39

Characterization of lattice-matched and strained GaInAs/AlInAs HEMT structures by photoluminescence spectroscopy

A. Tabata, T. Benyattou, G. Guillot, A. Georgakilas, K. Zekentes, G. Halkias

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 242 KB

english, 1993

40

Materials problems for the development of InGaAs/InAlAs HEMT technology

K. Zekentes, G. Halkias, A. Dimoulas, A. Tabata, T. Benyattou, G. Guillot, J.R. Morante, F. Peiró, A. Cornet, A. Georgakilas, A. Christou

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 950 KB

english, 1993

41

High temperature ohmic contacts to 3C-SiC grown on Si substrates by chemical vapor deposition

G. Constantinidis, N. Kornilios, K. Zekentes, J. Stoemenos, L. di. Cioccio

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 382 KB

english, 1997

42

Cr/4H-SiC Schottky contacts investigated by electrical and photoelectron spectroscopy techniques

C. Koliakoudakis, J. Dontas, S. Karakalos, M. Kayambaki, S. Ladas, G. Konstantinidis, K. Zekentes, S. Kennou

Journal:

physica status solidi (a)

Year:

2008

Language:

english

File:

PDF, 243 KB

english, 2008

43

Room-temperature photoreflectance as an efficient tool for study of the crystalline quality of InAlAs layers grown on InP substrates

Monéger, S., Tabata, A., Bru, C., Guillot, G., Georgakilas, A., Zekentes, K., Halkias, G.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 622 KB

english, 1993

44

Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n Diode

Kakanakov, Roumen, Kassamakova, Liliana, Hristeva, N., Lepoeva, G., Kuznetsov, N.I., Zekentes, K.

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 338 KB

2002

45

Crystal Quality Evaluation by Electrochemical Preferential Etching of p-Type SiC Crystals

Kayambaki, M., Tsagaraki, K., Cimalla, V., Zekentes, K., Yakimova, R.

Journal:

Journal of The Electrochemical Society

Year:

2000

Language:

english

File:

PDF, 820 KB

english, 2000

46

Experimental investigation of noise in 4H–SiC p + –n–n + junctions

Arpatzanis, N, Tassis, D H, Dimitriadis, C A, Zekentes, K, Camara, N

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 60 KB

english, 2006

47

Theoretical and experimental operating wavelength of GaAs/Al 0.25 Ga 0.75 As IR photodetectors

Almaggoussi, A., Abounadi, A., Akabli, H., Zekentes, K., Androulaki, M.

Journal:

The European Physical Journal Applied Physics

Year:

2009

Language:

english

File:

PDF, 231 KB

english, 2009

48

Microwave p-i-n diodes and switches based on 4H-SiC

Camara, N., Zekentes, K., Romanov, L.P., Kirillov, A.V., Boltovets, M.S., Vassilevski, K.V., Haddad, G.

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 143 KB

english, 2006

49

Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs

Rogdakis, K, Poli, S, Bano, E, Zekentes, K, Pala, M G

Journal:

Year:

2009

Language:

english

File:

PDF, 595 KB

english, 2009

50

[IEEE 2006 European Microwave Conference - Manchester, UK (2006.09.10-2006.09.15)] 2006 European Microwave Conference - Microwave p-i-n diodes and switches based on 4H-SiC

Zekentes, Konstantinos, Camara, Nicolas, Konstantinidis, George, Romanov, Leonid, Kirillov, Aleksey, Boltovets, Mykola

Year:

2006

Language:

english

File:

PDF, 4.11 MB

english, 2006

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